Title :
One step Nano Selective Area Growth of localized InAs/InP quantum dots for single photon source applications
Author :
Gogneau, N. ; Le Gratiet, L. ; Cambril, E. ; Beaudoin, G. ; Patriarche, G. ; Beveratos, A. ; Hostein, R. ; Robert-Philip, I. ; Sagnes, I.
Author_Institution :
Lab. de Photonique et Nanostruct., CNRS, Marcoussis
Abstract :
We demonstrate a new approach based on Nano Selective Area Growth, to precisely localize InAs/InP quantum dots (QDs) grown by MetalOrganic Vapor Phase Epitaxy. This approach leads to the formation of site-controlled InAs/InP QDs with high structural properties, and allows a precise control of the growth rate and thus of the QD size. The InP capping layer presents an optimal surface morphology for the development of microcavities located around the QDs.
Keywords :
III-V semiconductors; MOCVD; indium compounds; semiconductor growth; semiconductor quantum dots; surface morphology; vapour phase epitaxial growth; InAs-InP; capping layer; metalorganic vapor phase epitaxy; nano selective area growth; quantum dots; structural properties; surface morphology; Atomic force microscopy; Dielectric substrates; Epitaxial growth; Hydrogen; Indium phosphide; Microcavities; Nanostructures; Quantum dots; Scanning electron microscopy; Transmission electron microscopy; Metalorganic vapor phase epitaxy; Selective area growth; Single photon source; quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702981
