Title :
Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
Author :
Tångring, I. ; Wang, S.M. ; Larsson, A. ; Ni, H.Q. ; Wu, B.P. ; Wu, D.H. ; Xiong, Y.H. ; Huang, S.S. ; Niu, Z.C.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 mum range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50 times 1250 mum2 broad area Fabry-Perot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 mum at room temperature.
Keywords :
III-V semiconductors; current density; dislocation density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; Fabry-Perot laser; GaAs; InGaAs-GaAs; MBE; metamorphic laser; molecular beam epitaxy growth; quantum well laser; temperature 293 K to 298 K; threading dislocation densities; threshold current density; wavelength 1.58 mum; Annealing; Buffer layers; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702982
