DocumentCode :
181373
Title :
2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate
Author :
Unni, V. ; Hong Long ; Sweet, Mark ; Balachandran, A. ; Narayanan, E.M.S. ; Nakajima, Akitoshi ; Kawai, Hiroyuki
Author_Institution :
Dept. of EEE, Univ. of Sheffield, Sheffield, UK
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
245
Lastpage :
248
Abstract :
This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (VBR) of ~ 2400V, specific on-state resistance (RON.A) of ~ 14 mΩ.cm2 and a Power Device Figure of Merit (PDFOM = VBR2/RON.A) of ~ 400 MW/cm2.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor diodes; silicon compounds; wide band gap semiconductors; GaN; PSJ; SiC; capacitance voltage measurements; high voltage polarization superjunction Schottky barrier diodes; reverse blocking voltage; semiinsulating 6H-SiC substrate; voltage 2.4 kV; Aluminum gallium nitride; Anodes; Capacitance; Gallium nitride; HEMTs; MODFETs; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
ISSN :
1943-653X
Print_ISBN :
978-1-4799-2917-7
Type :
conf
DOI :
10.1109/ISPSD.2014.6856022
Filename :
6856022
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=181373
بازگشت