2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

Author

Unni, V. ; Hong Long ; Sweet, Mark ; Balachandran, A. ; Narayanan, E.M.S. ; Nakajima, Akitoshi ; Kawai, Hiroyuki

Author_Institution

Dept. of EEE, Univ. of Sheffield, Sheffield, UK

fYear

2014

fDate

15-19 June 2014

Firstpage

245

Lastpage

248

Abstract

This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (V_BR) of ~ 2400V, specific on-state resistance (R_ON.A) of ~ 14 mΩ.cm² and a Power Device Figure of Merit (PDFOM = V_BR²/R_ON.A) of ~ 400 MW/cm².

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor diodes; silicon compounds; wide band gap semiconductors; GaN; PSJ; SiC; capacitance voltage measurements; high voltage polarization superjunction Schottky barrier diodes; reverse blocking voltage; semiinsulating 6H-SiC substrate; voltage 2.4 kV; Aluminum gallium nitride; Anodes; Capacitance; Gallium nitride; HEMTs; MODFETs; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6856022

Filename

6856022