High quality InxGa1−xAs (x: 0.1– 0.13) platy crystal growth for substrates of 1.3μm laser diodes

Author

Kinoshita, Keizo ; Ueda, Toshitsugu ; Yoda, S. ; Arai, Manabu ; Kawaguchi, Yuki ; Kondo, Yuta ; Aoki, Hidetaka ; Hosokawa, T. ; Yamamoto, Seiichi

Author_Institution

Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Tsukuba

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We have prepared homogeneous ternary In_xGa_1-xAs (x: 0.1 - 0.13) platy single crystals for 1.3 mum laser diode substrates by a novel bulk crystal growth technique named the TLZ (traveling liquidus-zone) method. We further improved the crystal quality by optimizing growth conditions and In_xGa_1-xAs (x: 0.1 - 0.13) single crystals having high quality area larger than 10 times30 mm² were reproducibly grown.

Keywords

III-V semiconductors; crystal growth; gallium arsenide; indium compounds; semiconductor lasers; InGaAs; bulk crystal growth; homogeneous ternary crystals; laser diode substrates; platy crystal growth; traveling liquidus-zone method; wavelength 1.3 mum; Chemical lasers; Crystallization; Diode lasers; Fluctuations; Furnaces; Gallium arsenide; Optical surface waves; Photonic crystals; Stability; Temperature control; a new growth method; bulk crystal growth; substrates for laser diodes; ternary;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702984

Filename

4702984