Title :
High quality InxGa1−xAs (x: 0.1– 0.13) platy crystal growth for substrates of 1.3μm laser diodes
Author :
Kinoshita, Keizo ; Ueda, Toshitsugu ; Yoda, S. ; Arai, Manabu ; Kawaguchi, Yuki ; Kondo, Yuta ; Aoki, Hidetaka ; Hosokawa, T. ; Yamamoto, Seiichi
Author_Institution :
Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Tsukuba
Abstract :
We have prepared homogeneous ternary InxGa1-xAs (x: 0.1 - 0.13) platy single crystals for 1.3 mum laser diode substrates by a novel bulk crystal growth technique named the TLZ (traveling liquidus-zone) method. We further improved the crystal quality by optimizing growth conditions and InxGa1-xAs (x: 0.1 - 0.13) single crystals having high quality area larger than 10 times30 mm2 were reproducibly grown.
Keywords :
III-V semiconductors; crystal growth; gallium arsenide; indium compounds; semiconductor lasers; InGaAs; bulk crystal growth; homogeneous ternary crystals; laser diode substrates; platy crystal growth; traveling liquidus-zone method; wavelength 1.3 mum; Chemical lasers; Crystallization; Diode lasers; Fluctuations; Furnaces; Gallium arsenide; Optical surface waves; Photonic crystals; Stability; Temperature control; a new growth method; bulk crystal growth; substrates for laser diodes; ternary;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702984
