Title :
Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(001)
Author :
Dupuy, E. ; Xu, G. ; Regreny, P. ; Robach, Y. ; Gendry, M. ; Patriarche, G. ; Chauvin, N. ; Bru-Chevallier, C. ; Morris, D. ; Pauc, N. ; Aimez, V. ; Drouin, D.
Author_Institution :
CNRS, Ecole Centrale de Lyon, Ecully
Abstract :
Growth mechanisms controlling the shape of InAs quantum dots grown by solid source MBE on InP(001) are studied. InAs surface reconstructions play an important role to get more isotropic quantum dots rather than elongated quantum dashes. Dash to dot shape transition is also demonstrated with postgrowth treatments that change InAs surface reconstructions. Properties of such single InAs/InP quantum dots on low density samples are finally evaluated with microphotoluminescence and cathodoluminescence studies.
Keywords :
III-V semiconductors; cathodoluminescence; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; surface reconstruction; InAs-InP; InP; InP(001)-substrate; cathodoluminescence; isotropic quantum dots; microphotoluminescence; quantum dot growth; solid source MBE; surface reconstructions; Atomic force microscopy; Indium phosphide; Molecular beam epitaxial growth; Nanostructures; Quantum dots; Shape control; Solids; Surface reconstruction; Surface treatment; Temperature; InAs/InP quantum dots; Self-organized growth; shape transition; single quantum dot; solid source MBE; surface reconstructions;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702986
