Title :
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
Author :
Mizushima, Tomonori ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Kato, Toshihiko ; Harada, Shingo ; Tanaka, Yuichi ; Okamoto, Mitsuo ; Sometani, Mitsuru ; Okamoto, Dai ; Kumagai, Naoki ; Matsunaga, Shinichiro ; Deguchi, Tadayoshi ; Arai, Manabu ; Hatakeyama, T
Author_Institution :
Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., AIST, Tsukuba, Japan
Abstract :
4H-SiC carbon face flip-type n-channel implantation and epitaxial (IE)-IGBT with an epitaxial p++ substrate was developed and its switching test was carried out. We were able to achieve an ultrahigh blocking voltage greater than 16 kV, extremely low Von (6.35 V at 20 A), and good temperature stability. The switching operation was achieved by connecting three IGBTs in parallel, with a total ICE of 60 A and VCE 5 kV. The turn-off loss and turn-on loss were about 220 mJ and 120 mJ, respectively at room temperature. They show low switching loss of ultrahigh voltage SiC IE-IGBT and the possibility of large scale module with parallel connection.
Keywords :
insulated gate bipolar transistors; silicon compounds; wide band gap semiconductors; 4H-SiC carbon face flip-type n-channel IE-IGBT; SiC; current 20 A; current 60 A; dynamic characteristics; epitaxial p++ substrate; implantatioN-epitaxial IGBT; large-current capacity module; switching loss; switching test; temperature stability; turn-off loss; turn-on loss; ultrahigh-blocking voltage; ultrahigh-voltage silicon carbide flip-type n-channel IE-IGBT; voltage 16 kV; voltage 6.35 V; Face; Insulated gate bipolar transistors; PIN photodiodes; Silicon carbide; Substrates; Switches; Temperature dependence;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856030
