DocumentCode
1813893
Title
Dark current mechanisms in bulk GaInNAs photodiodes
Author
Soong, W.M. ; Ng, J.S. ; Steer, M.J. ; Hopkinson, M. ; David, J.P.R. ; Chamings, J. ; Sweeney, S.J. ; Adams, A.R. ; Allam, J.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
We have grown a series of bulk GaInNAs p-i-n diodes and identified some of the dark current mechanisms present in our devices. With a nitrogen composition of ~4 %, the band gap can be reduced to 0.94 eV. We also demonstrate that low dark current density is achievable without compromising the absorption and hence quantum efficiency up to 1.4 mum.
Keywords
III-V semiconductors; current density; dark conductivity; energy gap; gallium arsenide; gallium compounds; indium compounds; p-i-n photodiodes; GaInNAs; band gap; dark current density; p-i-n diodes; photodiodes; quantum efficiency; wavelength 1.4 mum; Dark current; Gallium arsenide; Gold; Indium; Nitrogen; P-i-n diodes; PIN photodiodes; Photonic band gap; Plasma temperature; Zinc; GaAs; GaInNAs; photodiode;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702987
Filename
4702987
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