Title :
SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs
Author :
d´Alessandro, Vincenzo ; Magnani, A. ; Riccio, M. ; Breglio, G. ; Irace, A. ; Rinaldi, Niccolo ; Castellazzi, Alberto
Author_Institution :
Dept. Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy
Abstract :
This paper presents a computationally efficient 3-D simulation approach for the dynamic electrothermal analysis of SiC power MOSFETs. The strategy relies on a circuit representation of the whole device, where the electrothermal feedback is enabled through an equivalent electrical network, and the elementary device cell is described by a novel behavioral model accounting for the non-intuitive temperature dependences of key physical parameters.
Keywords :
SPICE; equivalent circuits; power MOSFET; semiconductor device models; silicon compounds; thermal analysis; wide band gap semiconductors; 3D simulation; SPICE modeling; SiC; behavioral model; circuit representation; dynamic electrothermal analysis; dynamic electrothermal simulation; electrothermal feedback; elementary device cell; equivalent electrical network; nonintuitive temperature dependency; power MOSFET; whole device; Integrated circuit modeling; MOSFET; SPICE; Semiconductor device modeling; Silicon carbide; Solid modeling;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856032
