• DocumentCode
    181395
  • Title

    High-speed and low switching loss operation of 1700 V 60 A SiC MOSFETs installed in low parasitic inductance module

  • Author

    Kono, Hiroshi ; Takao, Kazuto ; Suzuki, Takumi ; Shinohe, Takashi

  • Author_Institution
    Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2014
  • fDate
    15-19 June 2014
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    A 1700 V 60 A SiC MOSFET has been fabricated and the high-speed switching characteristics are evaluated. The SiC MOSFET is designed to have low internal gate resistance (RGin) in order to realize the high-speed switching without parasitic turn-on of the opposite SiC MOSFET in a half bridge. By using the developed SiC MOSFETs, a 1700 V 360A power module with very low parasitic inductance structure has been fabricated to enable high speed switching operations.
  • Keywords
    MOSFET; silicon compounds; wide band gap semiconductors; MOSFETs; current 360 A; current 60 A; high-speed switching characteristics; low internal gate resistance; low parasitic inductance module; low switching loss operation; voltage 1700 V; Inductance; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Switching loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-2917-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2014.6856033
  • Filename
    6856033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=181395