DocumentCode :
181395
Title :
High-speed and low switching loss operation of 1700 V 60 A SiC MOSFETs installed in low parasitic inductance module
Author :
Kono, Hiroshi ; Takao, Kazuto ; Suzuki, Takumi ; Shinohe, Takashi
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
289
Lastpage :
292
Abstract :
A 1700 V 60 A SiC MOSFET has been fabricated and the high-speed switching characteristics are evaluated. The SiC MOSFET is designed to have low internal gate resistance (RGin) in order to realize the high-speed switching without parasitic turn-on of the opposite SiC MOSFET in a half bridge. By using the developed SiC MOSFETs, a 1700 V 360A power module with very low parasitic inductance structure has been fabricated to enable high speed switching operations.
Keywords :
MOSFET; silicon compounds; wide band gap semiconductors; MOSFETs; current 360 A; current 60 A; high-speed switching characteristics; low internal gate resistance; low parasitic inductance module; low switching loss operation; voltage 1700 V; Inductance; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Switching loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
ISSN :
1943-653X
Print_ISBN :
978-1-4799-2917-7
Type :
conf
DOI :
10.1109/ISPSD.2014.6856033
Filename :
6856033
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=181395
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