Title :
A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology
Author :
Kurachi, S. ; Murata, Y. ; Ishikawa, Seiichiro ; Itoh, N. ; Yonemura, K.
Author_Institution :
Waseda Univ., Shinjuku
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.3S μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequency of 4.37 GHz.
Keywords :
BiCMOS integrated circuits; germanium compounds; microwave oscillators; phase noise; silicon compounds; varactors; voltage-controlled oscillators; 0.35 μm SiGe BiCMOS technology; DC current consumption; NMOS varactor; SiGe; VCO; control circuit; current 5.8 mA; frequency 1 MHz; frequency 2.67 GHz to 4.37 GHz; p-n diode; phase noise; resonant circuit; single analog control voltage; size 0.35 μm; spiral inductor; ultrawideband voltage controlled oscillator IC; voltage 4.0 V; BiCMOS integrated circuits; Circuit optimization; Frequency; Germanium silicon alloys; MOS devices; RLC circuits; Silicon germanium; Ultra wideband technology; Voltage control; Voltage-controlled oscillators; Silicon bipolar/BiCMOS process technology; VCO; resonant circuit; wide tuning range;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1018-7
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351827
