Title :
1.2kV class SiC MOSFETs with improved performance over wide operating temperature
Author :
Losee, P. ; Bolotnikov, Alexander ; Yu, Long ; Beaupre, R. ; Stum, Zachary ; Kennerly, S. ; Dunne, G. ; Sui, Yao ; Kretchmer, J. ; Johnson, A. ; Arthur, Stephen ; Saia, R. ; McMahon, James ; Lilienfeld, D. ; Esler, D. ; Gowda, A. ; Hartig, M. ; Sandvik, P
Author_Institution :
Gen. Electr. Global Res., Niskayuna, NY, USA
Abstract :
In this paper, we report on 1.2kV SiC MOSFETs rated to Tj, max=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at Tj=25°C and 47mOhm/103mOhms at Tj=150°C are shown for 0.1cm2 and 0.2cm2 die. 1000 hour High-Temperature Gate-Bias (HTGB) tests at Tj=200°C show excellent threshold stability with less than 5% parametric shift observed. High-Temperature Reverse Bias (HTRB) at Tj=200°C/VDS=960V also show stable and reliable operation. Single-pulse avalanche energies of over EAv=1.75J are obtained with 0.1cm2 MOSFETs.
Keywords :
power MOSFET; power semiconductor devices; semiconductor device testing; silicon compounds; wide band gap semiconductors; MOSFET; SiC; energy 1.75 J; high-temperature gate-bias tests; industry standard qualification tests; resistance 103 mohm; resistance 35 mohm; resistance 47 mohm; resistance 79 mohm; single-pulse avalanche energies; temperature 150 C; temperature 200 C; temperature 25 C; threshold stability; time 1000 hour; voltage 1.2 kV; voltage 960 V; Logic gates; MOSFET; Performance evaluation; Reliability; Silicon carbide; Stress; Temperature;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856035
