Title :
Influence of Yb and Yb2O3 on the properties of InP layers
Author :
Procházková, O. ; Grym, J. ; Zavadil, J. ; Lorineik, J. ; Zdánský, K.
Author_Institution :
Dept. of Technol., Inst. of Photonics & Electron., Prague
Abstract :
The influence of Yb and Yb2O3 addition on the properties of InP epitaxial layers is reported. We concentrated on the investigation of gettering and/or doping efficiency of Yb added in various forms. Layers prepared by Liquid Phase Epitaxy were examined by using SEM, SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The efficient gettering was confirmed for both Yb and Yb2O3 addition into the growth melt; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor, responsible for nrarrp conductivity conversion was identified as isoelectronic Yb impurity on the In site.
Keywords :
Hall effect; III-V semiconductors; doping profiles; electrical conductivity; getters; impurities; indium compounds; liquid phase epitaxial growth; photoluminescence; scanning electron microscopy; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; ytterbium; ytterbium compounds; C-V characteristics; InP:Yb; InP:Yb2O3; SEM; SIMS; doping efficiency; electrical conductivity; epitaxial layers; gettering; isoelectronic impurity; liquid phase epitaxy; low temperature PL spectroscopy; temperature dependent Hall measurements; Capacitance-voltage characteristics; Doping; Epitaxial growth; Epitaxial layers; Gettering; Indium phosphide; Phase measurement; Spectroscopy; Temperature dependence; Temperature measurement; InP; SIMS; Yb; photoluminiscence; rare earth elements; semiconductors;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702991
