Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates

Author

Ueno, Masahiro ; Yoshimoto, Shusuke ; Ishihara, Koichi ; Okada, Masayuki ; Sumiyoshi, Kazuhide ; Hirano, Harutoyo ; Mitsuhashi, Fuminori ; Yoshizumi, Yusuke ; Ishizuka, T. ; Kiyama, Makoto

Author_Institution

Semicond. Technol. R&D Labs., Sumitomo Electr. Ind. Ltd., Osaka, Japan

fYear

2014

fDate

15-19 June 2014

Firstpage

309

Lastpage

312

Abstract

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.

Keywords

III-V semiconductors; Schottky diodes; dislocation density; gallium compounds; wide band gap semiconductors; GaN; SBDs; current 5 A; fast recovery performance; free-standing substrates; low dislocation density; low-dislocation-density substrates; reverse aging characteristics; reverse recovery characteristics; temperature 150 degC; time 1000 hour; vertical GaN Schottky barrier diodes; voltage 600 V; Gallium nitride; Schottky barriers; Schottky diodes; Silicon; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6856038

Filename

6856038