Title :
On the Feasibility of few-THz Bipolar Transistors
Author :
Rodwell, Mark ; Lind, E. ; Griffith, Z. ; Crook, A.M. ; Bank, S.R. ; Singisetti, U. ; Wistey, M. ; Burek, G. ; Gossard, A.C.
Author_Institution :
Univ. of California, Santa Barbara
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
We review the limits faced in seating of InP-based bipolar transistors for increased device bandwidth. Emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth. Devices with 1-1.5 THz simultaneous ftau, and fmax are feasible; these will enable 750 GHz monolithic amplifiers and medium-scale digital ICs at ~400-500 GHz clock rate.
Keywords :
bipolar digital integrated circuits; millimetre wave bipolar transistors; submillimetre wave integrated circuits; submillimetre wave transistors; thermal resistance; IC thermal resistance; THz bipolar transistors; contact resistivity; frequency 1 THz to 1.5 THz; frequency 750 GHz; medium-scale digital IC; monolithic amplifiers; Bandwidth; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; MOSFETs; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351829
