The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications

Author

Chou, Y.C. ; Lee, L.J. ; Yang, J.M. ; Lange, M.D. ; Nam, P.S. ; Lin, C.H. ; Quach, H. ; Gutierrez, A.L. ; Barsky, M.E. ; Wojtowicz, M. ; Oki, A.K. ; Block, T.R. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance strongly depends on the gate metallization. This information is essential for the manufacturability of 0.1 mum AlSb/InAs HEMTs for ultralow-power applications.

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; low-power electronics; metallisation; AlSb-InAs; gate metallization; manufacturability; metamorphic HEMTS; ultralow-power applications; Electron mobility; Gallium arsenide; HEMTs; Indium phosphide; Inorganic materials; MODFETs; Manufacturing; Metallization; Molecular beam epitaxial growth; Substrates; HEMT; manufacturability; sinking; ultralow-power;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702994

Filename

4702994