Title :
Static and dynamic properties of p-doped quantum dash lasers on InP
Author :
Hein, S. ; von Hinten, V. ; Höfling, S. ; Forchel, A.
Author_Institution :
Tech. Phys., Univ. Wurzburg, Wurzburg
Abstract :
The influence of p-type modulation doping on the static and dynamic properties of QDash lasers on (100) InP has been investigated. Though the differential gain was found to rise 60% for doping concentrations of 50 holes per QDash for constant cavity length lasers, enhanced gain compression and enlarged thermal heating limit the modulation response. Therefore, the maximum modulation bandwidth of 8 GHz is obtained for a moderate doping level of 10 holes per QDash.
Keywords :
III-V semiconductors; doping profiles; elemental semiconductors; indium compounds; laser cavity resonators; optical modulation; quantum dash lasers; quantum dot lasers; semiconductor quantum dots; silicon; InP:Si; cavity length lasers; doping concentrations; dynamic property; frequency 8 GHz; modulation bandwidth; p-doped quantum dash lasers; p-type modulation doping; quantum dot laser structures; static property; thermal heating limit; Current density; Doping; Epitaxial layers; Heating; Indium phosphide; Laser modes; Quantum dot lasers; Quantum dots; Temperature; Waveguide lasers; QDash; p-doping; quantum dash; quantum dot laser;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702995
