Static and dynamic properties of p-doped quantum dash lasers on InP

Author

Hein, S. ; von Hinten, V. ; Höfling, S. ; Forchel, A.

Author_Institution

Tech. Phys., Univ. Wurzburg, Wurzburg

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

The influence of p-type modulation doping on the static and dynamic properties of QDash lasers on (100) InP has been investigated. Though the differential gain was found to rise 60% for doping concentrations of 50 holes per QDash for constant cavity length lasers, enhanced gain compression and enlarged thermal heating limit the modulation response. Therefore, the maximum modulation bandwidth of 8 GHz is obtained for a moderate doping level of 10 holes per QDash.

Keywords

III-V semiconductors; doping profiles; elemental semiconductors; indium compounds; laser cavity resonators; optical modulation; quantum dash lasers; quantum dot lasers; semiconductor quantum dots; silicon; InP:Si; cavity length lasers; doping concentrations; dynamic property; frequency 8 GHz; modulation bandwidth; p-doped quantum dash lasers; p-type modulation doping; quantum dot laser structures; static property; thermal heating limit; Current density; Doping; Epitaxial layers; Heating; Indium phosphide; Laser modes; Quantum dot lasers; Quantum dots; Temperature; Waveguide lasers; QDash; p-doping; quantum dash; quantum dot laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702995

Filename

4702995