• DocumentCode
    1814106
  • Title

    On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation

  • Author

    Chevalier, P. ; Zerounian, N. ; Barbalat, B. ; Aniel, F. ; Chantre, Alain

  • Author_Institution
    STMicroelectron., Crolles
  • fYear
    2007
  • fDate
    Sept. 30 2007-Oct. 2 2007
  • Firstpage
    26
  • Lastpage
    29
  • Abstract
    The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ftau/fmax trade-offs is performed. It allows to identify the principal development axes to reach half-terahertz at 300 K, a frequency already obtained at 40 K.
  • Keywords
    cryogenics; elemental semiconductors; heterojunction bipolar transistors; silicon; SiGe; cryogenic measurements; cryogenic temperatures; temperature 300 K; temperature 40 K; terahertz operation; transit times analysis; Cryogenics; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Performance evaluation; Probes; Silicon germanium; Submillimeter wave measurements; Temperature; Cryogenic temperatures; SiGe HBT; terahertz;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-1019-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2007.4351831
  • Filename
    4351831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1814106