• DocumentCode
    1814121
  • Title

    Design and implementation of a prototype hybrid simulation environment

  • Author

    Mozumder, P.K.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX, USA
  • fYear
    1993
  • fDate
    9-12 May 1993
  • Abstract
    A prototype coupling a process simulator, like SUPREM4, to external process and equipment models, such as Advanced Vacuum Processors (AVPs), has been investigated and implemented. A MOS transistor was simulated using the hybrid simulation prototype. A combination of process simulators and AVP equipment models were used in the simulations. The modified process flow utilizes process simulators like SUPREM4 and SAMPLE, together with AVP equipment models for plasma-assisted deposition and etch of polysilicon. It is concluded that the prototype demonstrates the feasibility of a mixed equipment model-process simulator environment
  • Keywords
    semiconductor process modelling; MOS transistor; SAMPLE; SUPREM4; Si; advanced vacuum processor equipment models; elemental semiconductor; etch; implementation; mixed equipment model-process simulator; modified process flow; plasma-assisted deposition; polysilicon; prototype hybrid simulation environment; Circuit simulation; Integrated circuit modeling; Plasma measurements; Plasma simulation; Plasma temperature; Predictive models; Response surface methodology; Semiconductor device modeling; Semiconductor process modeling; Virtual prototyping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-0826-3
  • Type

    conf

  • DOI
    10.1109/CICC.1993.590587
  • Filename
    590587