Title :
TCAD simulation methodology for electrothermal analysis of discrete devices including package
Author :
Nallet, F. ; Silvestri, L. ; Cilento, Tommaso ; Chan-Su Yun ; Holland, Steffen ; Rover, Martin
Author_Institution :
Synopsys Switzerland LLC, Zurich, Switzerland
Abstract :
In this paper, three methodologies for fully coupled rigorous electrothermal simulation of discrete devices including the package are proposed. The first one is based on full 3D modeling using TCAD tools applied to a simple BJT. The second approach, using combined 2D/3D modeling, is applied to a multiple-stripe BJT design that reduces the computation time by a factor of 10 while maintaining a reasonable accuracy. In the third approach we propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode and couples temperature non-uniformity to the active device electrothermal behavior.
Keywords :
CAD; bipolar transistors; electronic engineering computing; electronics packaging; semiconductor device models; BJT; TCAD simulation; discrete device; electronics package; electrothermal analysis; full 3D modeling; fully coupled rigorous electrothermal simulation; Couplings; Junctions; Mathematical model; Semiconductor process modeling; Solid modeling; Temperature distribution; Three-dimensional displays;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856044