DocumentCode
1814150
Title
Conception and fabrication of InAs-based hot electron transistor
Author
Daoud, Thibaut ; Boissier, Guilhem ; Devenson, Jan ; Sabatini, Giulio ; Varani, Luca ; Baranov, Alexei ; Teissier, Roland
Author_Institution
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
An innovative hot electron transistor based on InAs/AlSb heterostructures is proposed and studied. First fabricated devices demonstrated static current gain of 5 at room temperature. The potential of this device for high frequency operation is also discussed.
Keywords
III-V semiconductors; aluminium compounds; hot electron transistors; indium compounds; semiconductor heterojunctions; InAs-AlSb; heterostructures; high frequency operation; hot electron transistor; static current gain; temperature 293 K to 298 K; Electron emission; Etching; Fabrication; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Quantum cascade lasers; Rough surfaces; Superlattices; HBT; InAs; high-frequency; hot electron;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702998
Filename
4702998
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