Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology

Author

Duvernay, Julien ; Brossard, F. ; Borot, G. ; Boissonnet, L. ; Vandelle, B. ; Rubaldo, L. ; Deleglise, F. ; Avenier, G. ; Chevalier, P. ; Rauber, B. ; Dutartre, D. ; Chantre, A.

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

34

Lastpage

37

Abstract

This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.

Keywords

BiCMOS integrated circuits; heterojunction bipolar transistors; silicon-on-insulator; BiCMOS technology; complementary thin-SOI BiCMOS technology; epitaxy emitter/base architecture; heterojunction bipolar transistors; pnp HBT; silicon-on-insulator; BiCMOS integrated circuits; CMOS technology; Costs; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Silicon germanium; Substrates; BiCMOS integrated circuits technology; heterojunction bipolar transistors; pnp; silicon-germanium; silicon-on-isulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351833

Filename

4351833