Title :
Real-time failure monitoring system for high power IGBT under acceleration test up to 500 A stress
Author :
Watanabe, Atsuyori ; Omura, Ichiro ; Tsukuda, Masanori
Author_Institution :
Dept. of Electr. Eng. & Electron., Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
Real-time failure monitoring system for IGBT module was demonstrated under 500 A power cycling test. The system successfully captured internal phenomena occurred in interface regions of the device under test. Moreover, we proposed realtime failure analysis method by combining the real-time monitoring and image processing techniques. This failure analysis method enables to distinguish the place where degradation occurs in DUT and also trace internal degradation process to failure.
Keywords :
insulated gate bipolar transistors; life testing; power bipolar transistors; semiconductor device reliability; semiconductor device testing; IGBT module failure; acceleration test; current 500 A; failure analysis method; high power IGBT; image processing technique; internal degradation; internal phenomena; power cycling test; real time failure monitoring system; Degradation; Failure analysis; Insulated gate bipolar transistors; Monitoring; Real-time systems; Reliability; Stress;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856045
