DocumentCode
181418
Title
All-SiC power module for photovoltaic Power Conditioner System
Author
Nashida, Norihiro ; Hinata, Yuichiro ; Horio, Masafumi ; Yamada, Ryota ; Ikeda, Yasuhiro
Author_Institution
Electron. Device Lab., Fuji Electr. Co. Ltd., Matsumoto, Japan
fYear
2014
fDate
15-19 June 2014
Firstpage
342
Lastpage
345
Abstract
We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected power circuit board to semiconductor realizes high power density. Therefore, this new structural design achieves compact size of the All-SiC module. Module downsizing dramatically effects for module inductance property. Low inductance design enables high frequency switching with lower noise and lower switching loss. Furthermore, the developed epoxy resin structure is more reliable at high temperature than the conventional structure. At the result of the All-SiC development which is installed 20 kW photovoltaic PCS, 1/4 of volume downsizing and 99.0% of efficiency is achieved.
Keywords
Schottky barriers; Schottky diodes; modules; photovoltaic power systems; power MOSFET; printed circuits; silicon compounds; thermal resistance; wide band gap semiconductors; MOSFET; PCS; SBD; Schottky barrier diode; SiC; SiN; efficiency 99.0 percent; epoxy resin structure; high frequency switching; high power density; low inductance design; low thermal resistance; metal oxide semiconductor field effect transistor; module inductance property; photovoltaic PCS; photovoltaic power conditioner system; power 20 kW; power circuit board; power module; structural design; switching loss; thick copper block; Inductance; Logic gates; Reliability; Resistance; Silicon carbide; Substrates; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6856046
Filename
6856046
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