• DocumentCode
    181418
  • Title

    All-SiC power module for photovoltaic Power Conditioner System

  • Author

    Nashida, Norihiro ; Hinata, Yuichiro ; Horio, Masafumi ; Yamada, Ryota ; Ikeda, Yasuhiro

  • Author_Institution
    Electron. Device Lab., Fuji Electr. Co. Ltd., Matsumoto, Japan
  • fYear
    2014
  • fDate
    15-19 June 2014
  • Firstpage
    342
  • Lastpage
    345
  • Abstract
    We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected power circuit board to semiconductor realizes high power density. Therefore, this new structural design achieves compact size of the All-SiC module. Module downsizing dramatically effects for module inductance property. Low inductance design enables high frequency switching with lower noise and lower switching loss. Furthermore, the developed epoxy resin structure is more reliable at high temperature than the conventional structure. At the result of the All-SiC development which is installed 20 kW photovoltaic PCS, 1/4 of volume downsizing and 99.0% of efficiency is achieved.
  • Keywords
    Schottky barriers; Schottky diodes; modules; photovoltaic power systems; power MOSFET; printed circuits; silicon compounds; thermal resistance; wide band gap semiconductors; MOSFET; PCS; SBD; Schottky barrier diode; SiC; SiN; efficiency 99.0 percent; epoxy resin structure; high frequency switching; high power density; low inductance design; low thermal resistance; metal oxide semiconductor field effect transistor; module inductance property; photovoltaic PCS; photovoltaic power conditioner system; power 20 kW; power circuit board; power module; structural design; switching loss; thick copper block; Inductance; Logic gates; Reliability; Resistance; Silicon carbide; Substrates; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-2917-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2014.6856046
  • Filename
    6856046