DocumentCode :
181418
Title :
All-SiC power module for photovoltaic Power Conditioner System
Author :
Nashida, Norihiro ; Hinata, Yuichiro ; Horio, Masafumi ; Yamada, Ryota ; Ikeda, Yasuhiro
Author_Institution :
Electron. Device Lab., Fuji Electr. Co. Ltd., Matsumoto, Japan
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
342
Lastpage :
345
Abstract :
We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected power circuit board to semiconductor realizes high power density. Therefore, this new structural design achieves compact size of the All-SiC module. Module downsizing dramatically effects for module inductance property. Low inductance design enables high frequency switching with lower noise and lower switching loss. Furthermore, the developed epoxy resin structure is more reliable at high temperature than the conventional structure. At the result of the All-SiC development which is installed 20 kW photovoltaic PCS, 1/4 of volume downsizing and 99.0% of efficiency is achieved.
Keywords :
Schottky barriers; Schottky diodes; modules; photovoltaic power systems; power MOSFET; printed circuits; silicon compounds; thermal resistance; wide band gap semiconductors; MOSFET; PCS; SBD; Schottky barrier diode; SiC; SiN; efficiency 99.0 percent; epoxy resin structure; high frequency switching; high power density; low inductance design; low thermal resistance; metal oxide semiconductor field effect transistor; module inductance property; photovoltaic PCS; photovoltaic power conditioner system; power 20 kW; power circuit board; power module; structural design; switching loss; thick copper block; Inductance; Logic gates; Reliability; Resistance; Silicon carbide; Substrates; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
ISSN :
1943-653X
Print_ISBN :
978-1-4799-2917-7
Type :
conf
DOI :
10.1109/ISPSD.2014.6856046
Filename :
6856046
Link To Document :
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