DocumentCode :
1814220
Title :
Performance evaluation of different SRAM topologies using 180, 90 and 45 nm technology
Author :
Shaik, Sadulla ; Jonnala, Prathiba
Author_Institution :
Sch. of Electron., Vignan Univ., Vadlamudi, India
fYear :
2013
fDate :
5-6 Dec. 2013
Firstpage :
15
Lastpage :
20
Abstract :
The design of various standard SRAM topologies with different technologies has been designed and tested for delay and power dissipation with respect to the different supply voltages. For this consideration, different topologies viz. 6T, 7T, 8T, 9T and 10T SRAM cells have taken. And these cells are designed using generic process development kit (gpdk) 45, 90 and 180 nm technologies. And all these are tested in cadence tool. The detailed analysis about these cells functionality and their characteristic behavior with the applied parameter of supply voltage is presented. The results of the delay, power dissipation with respect to the Vdd are plotted using MATLAB software. Also their layouts were designed and tabulated their areas.
Keywords :
SRAM chips; performance evaluation; transistors; MATLAB software; SRAM cells; SRAM topologies; cadence tool; generic process development kit; performance evaluation; power dissipation; supply voltage parameter; Delays; Layout; Power dissipation; SRAM cells; Topology; Transistors; SRAM design; low power; optimization; subthreshold SRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Renewable Energy and Sustainable Energy (ICRESE), 2013 International Conference on
Conference_Location :
Coimbatore
Type :
conf
DOI :
10.1109/ICRESE.2013.6927819
Filename :
6927819
Link To Document :
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