A compact thermal-via packaging design of GaInP/GaAs collector-up HBTs in small high-power amplifiers

Author

Lee, P.H. ; Chou, J.H. ; Tseng, H.C.

Author_Institution

Dept. of Eng. Sci., Nat. Cheng Kung Univ., Tainan

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device packaging; GaInP-GaAs; collector-up HBT; collector-up heterojunction bipolar transistor; compact thermal-via packaging design; finite element method; small high-power amplifiers; thermal performance; Fingers; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Packaging; Power system reliability; Temperature distribution; Thermal management; Thermal resistance; Collector-up heterojunction bipolar transistor (C-up HBT); finite-element modeling (FEM); high-power amplifier (HPA); thermal-via packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703000

Filename

4703000