Tunneling at emitter periphery in silicon nitride passivated InP/InGaAs HBTs

Author

Sachelarie, D. ; Predusca, G. ; Stanciu, G.A. ; Stanciu, S.G.

Author_Institution

Electr. Eng. Fac., Univ. Valahia of Targoviste, Targoviste

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

This work presents a new explanation of the abnormal injection phenomena at emitter-base junction of the silicon nitride passivated InP-based heterojunction bipolar transistors. We have suggested that the emitter mesa sidewall is accumulated and that thermionic field emission from this zone becomes the principal component of the collector current. The proposed theoretical model is in good agreement with experimental collector current Gummel plots and with atomic force microscopy measurements of mesa emitter edge.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device models; semiconductor heterojunctions; silicon compounds; thermionic electron emission; tunnelling; Si₃N₄-InP-InGaAs; atomic force microscopy; collector current; emitter-base junction; injection phenomena; mesa emitter edge; silicon nitride passivated heterojunction bipolar transistors; thermionic electron field emission model; tunneling; Atomic force microscopy; Atomic measurements; Current measurement; Force measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Silicon; Thermionic emission; Tunneling; Fermi level pinning; HBT; InP; atomic force microscopy; collector current; emitter surface; ideality factor; thermionic-field emission model; tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703001

Filename

4703001