Title :
A 12-bit 65 MS/s pipeline A/D converter in 0.18 μm SiGe BiCMOS
Author :
Devarajan, Siddharth ; Gutmann, Ronald J. ; Rose, Kenneth
Author_Institution :
Rensselaer Polytech Inst., Troy
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
This work discusses the benefits of a SiGe BiCMOS implementation over a CMOS implementation for pipeline A/Ds. While various circuit blocks in a pipeline A/D can benefit from the higher transconductance (gm), higher unity gain frequency (fT) and lower noise of SiGe HBTs, this work focuses on the most critical block in a pipeline A/D, the operational transconductance amplifier (OTA). An OTA employing an all NMOS pre-amplifier followed by a cascoded SiGe HBT stage with actively cascoded PMOS loads is designed. A prototype 12-bit pipeline A/D achieves a measured SNDR of 62.6 dB and a SFDR of 73.4 dB at 65 MS/s with a power dissipation of 325 mW and operates from dual 1.8 V and 3.3 V supplies.
Keywords :
CMOS integrated circuits; analogue-digital conversion; germanium compounds; operational amplifiers; silicon compounds; SiGe BiCMOS; operational transconductance amplifier; pipeline A/D converter; power 325 mW; unity gain frequency; voltage 1.8 V; voltage 3.3 V; word length 12 bit; BiCMOS integrated circuits; Circuit noise; Frequency; Germanium silicon alloys; Low-noise amplifiers; MOS devices; Operational amplifiers; Pipelines; Silicon germanium; Transconductance; Operational Transconductance Amplifier (OTA); Pipeline A/D converter; SiGe BiCMOS;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1018-7
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351837