DocumentCode :
1814325
Title :
Varactorless, tuneable LC-VCO for microwave frequencies in a 0.25 μm SiGe BiCMOS technology
Author :
Veenstra, H. ; Heijden, E. V d
Author_Institution :
Philips Res., Eindhoven
fYear :
2007
fDate :
Sept. 30 2007-Oct. 2 2007
Firstpage :
54
Lastpage :
57
Abstract :
Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to fcross. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C BiCMOS technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.
Keywords :
BiCMOS integrated circuits; circuit tuning; millimetre wave oscillators; silicon; silicon compounds; voltage-controlled oscillators; BiCMOS technology; LC-VCO; SiGe; capacitive loading; cross-coupled differential pair; emitter follower; frequency tuning; microwave frequencies; size 0.25 μm; voltage controlled oscillators; BiCMOS integrated circuits; Capacitance; Damping; Germanium silicon alloys; Microwave frequencies; Microwave technology; Silicon germanium; Topology; Tuning; Varactors; Voltage controlled oscillators; millimeter wave oscillators; negative resistance circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
ISSN :
1088-9299
Print_ISBN :
978-1-4244-1018-7
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2007.4351838
Filename :
4351838
Link To Document :
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