Title :
An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric
Author :
Moens, Peter ; Liu, Cong ; Banerjee, Adrish ; Vanmeerbeek, Piet ; Coppens, P. ; Ziad, H. ; Constant, Aurore ; Li, Zuyi ; De Vleeschouwer, H. ; Roig-Guitart, J. ; Gassot, P. ; Bauwens, Filip ; De Backer, E. ; Padmanabhan, B. ; Salih, Ali ; Parsey, J. ; Tac
Author_Institution :
ON Semicond., Oudenaarde, Belgium
Abstract :
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
Keywords :
III-V semiconductors; MOCVD; elemental semiconductors; gallium compounds; passivation; power HEMT; silicon; silicon compounds; wide band gap semiconductors; DHEMT; GaN; MISHEMT transistors; MOCVD grown; Si; SiN; gate dielectric; low device capacitance; off-state leakage; on-state conduction; power devices; surface passivation; voltage 650 V; Aluminum gallium nitride; Capacitance; Current measurement; Dielectrics; Gallium nitride; Logic gates; Silicon compounds;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856054
