Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

Author

Malladi, Ramana M. ; McPartlin, Michael ; Joseph, Alvin ; Lafontaine, Hugues ; Doherty, Mark

Author_Institution

IBM Microelectron., Essex

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

58

Lastpage

61

Abstract

Large-signal compact modeling of SiGe HBTs integrated into a new IBM BICMOS technology geared towards high-efficiency power amplifiers is described. The technology exhibits a record 73% PAE at 5.75 GHz in class AB operation. A scalable HiCUM model (high current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, f_T characteristics, output power, PAE and AM-PM performance of the device are discussed in detail.

Keywords

BiCMOS integrated circuits; germanium compounds; heterojunction bipolar transistors; microwave power amplifiers; silicon compounds; IBM BICMOS technology; SiGe; class AB operation; frequency 5.75 GHz; heterojunction bipolar transistor; high current model; high efficiency SiGe HBT; large-signal compact modeling; power amplifier application; scalable HiCUM model; BiCMOS integrated circuits; Capacitance; Doping profiles; Germanium silicon alloys; High power amplifiers; Microelectronics; Power amplifiers; Radio frequency; Semiconductor optical amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351839

Filename

4351839