Title :
1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer
Author :
Wong, P.S. ; Liang, B.L. ; Nuntawong, N. ; Xue, L. ; Tatebayashi, J. ; Brueck, S.R.J. ; Huffaker, D.L.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
Abstract :
InAs patterned QDs (PQDs) preferentially nucleate on faceted GaAs pyramidal buffers using selective area epitaxy by metalorganic chemical vapor deposition. The photoluminescence (PL) wavelength is shown to be controlled by a single growth parameter, the growth time, without affecting the density of PQDs. Strong room temperature PL emissions over 1.5 mum from PQDs are demonstrated. The long wavelength emission is attributed to the large QD size and the partial strain energy relaxation of PQDs.
Keywords :
III-V semiconductors; MOCVD; buffer layers; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; GaAs; InAs; metalorganic chemical vapor deposition; partial strain energy relaxation; photoluminescence; pyramidal buffers; quantum dots; room temperature; selective area epitaxy; single growth parameter; temperature 293 K to 298 K; wavelength emission; Capacitive sensors; Fiber lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Photoluminescence; Quantum dots; Shape; Substrates; Temperature; MOCVD; quantum dot; selective area growth;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703006
