1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer

Author

Wong, P.S. ; Liang, B.L. ; Nuntawong, N. ; Xue, L. ; Tatebayashi, J. ; Brueck, S.R.J. ; Huffaker, D.L.

Author_Institution

Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

InAs patterned QDs (PQDs) preferentially nucleate on faceted GaAs pyramidal buffers using selective area epitaxy by metalorganic chemical vapor deposition. The photoluminescence (PL) wavelength is shown to be controlled by a single growth parameter, the growth time, without affecting the density of PQDs. Strong room temperature PL emissions over 1.5 mum from PQDs are demonstrated. The long wavelength emission is attributed to the large QD size and the partial strain energy relaxation of PQDs.

Keywords

III-V semiconductors; MOCVD; buffer layers; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; GaAs; InAs; metalorganic chemical vapor deposition; partial strain energy relaxation; photoluminescence; pyramidal buffers; quantum dots; room temperature; selective area epitaxy; single growth parameter; temperature 293 K to 298 K; wavelength emission; Capacitive sensors; Fiber lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Photoluminescence; Quantum dots; Shape; Substrates; Temperature; MOCVD; quantum dot; selective area growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703006

Filename

4703006