DocumentCode
1814384
Title
Improvement of the Transfer Current Modeling in HICUM/L0
Author
Thiele, C. ; Berkner, J. ; Klein, W.
Author_Institution
Infineon Technol. AG, Neubiberg
fYear
2007
fDate
Sept. 30 2007-Oct. 2 2007
Firstpage
62
Lastpage
65
Abstract
HICUM/L0 is a bipolar compact model, which was developed to combine the advantage of the sophisticated HICUM/L2 and the simplicity of the well-known SGP-Model. In this paper improved model equations for the description of the forward transfer current in the HICUM/LO model are presented. The improved model equations avoid a negative slope which can occur in the simulated collector current, but they do not need additional model parameters.
Keywords
bipolar transistors; semiconductor device models; HICUM/LO; bipolar compact model; collector current; forward transfer current; negative slope; transfer current modeling; Bipolar transistors; Circuit simulation; Conductivity; Current density; Equations; Kirk field collapse effect; Semiconductor device modeling; Bipolar transistors; Circuit simulation; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location
Boston, MA
ISSN
1088-9299
Print_ISBN
978-1-4244-1019-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2007.4351840
Filename
4351840
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