Author :
Lubyshev, D. ; Fastenau, M. ; Wu, Y. ; Liu, W.K. ; Urteaga, M. ; Ha, W. ; Bergman, J. ; Brar, B. ; Bulsara, M.T. ; Fitzgerald, E.A. ; Hoke, W.E. ; Laroche, J.R. ; Herrick, K.J. ; Kazior, T.E.
Abstract :
MBE growth of InP-based HBTs on GeOI/Si substrates is described. A GaAs buffer is nucleated on the GeOI; then a graded InAlAs metamorphic buffer transitions the lattice constant to InP. TEM shows minimal anti-phase boundaries and limited dislocations propagating into the device layers. Large area DC parameters are similar to LM HBTs grown on InP. Small area devices exhibit peak current gain cutoff frequency (ft) of 170 GHz at 2 mA/mum2 nominal collector current density. Initial work involving selective epitaxial growth on patterned Ge substrates for future integration is also discussed.
Keywords :
III-V semiconductors; current density; dislocations; heterojunction bipolar transistors; indium compounds; lattice constants; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; transmission electron microscopy; Ge; Ge-Si; HBT structures; InP; MBE growth; TEM; antiphase boundaries; buffer layers; current density; current gain cutoff frequency; dislocations; frequency 170 GHz; lattice constant; metamorphic buffer transitions; nucleation; semiconductor growth; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical buffering; Optical microscopy; Substrates; GeOI/Si; Heterogenuous integration; InP-HBT on Si; MBE;
