DocumentCode
1814416
Title
Large Signal RF Characterization of Bipolar Transistors
Author
Tutt, Marcel ; Johnson, Eric
Author_Institution
Freescale Semicond. Inc., Tempe
fYear
2007
fDate
Sept. 30 2007-Oct. 2 2007
Firstpage
66
Lastpage
73
Abstract
Conventional performance figures of merit are reviewed and recent new figures of merit due to the proliferation of digital communications are presented. Basic load pull systems are described and sample results are presented. The role of large signal characterization in model validation is given.
Keywords
microwave bipolar transistors; microwave power amplifiers; power bipolar transistors; RF characterization; bipolar transistors; digital communications; load pull systems; microwave measurements; microwave power bipolar transistor amplifiers; Bipolar transistors; Digital communication; Impedance; Microwave amplifiers; Power amplifiers; Power system modeling; RF signals; Radio frequency; Radiofrequency amplifiers; Voltage; Bipolar transistors; microwave measurements; microwave power amplifiers; microwave power bipolar transistor amplifiers; microwave power bipolar transistors; modeling; power amplifiers; power bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location
Boston, MA
ISSN
1088-9299
Print_ISBN
978-1-4244-1019-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2007.4351841
Filename
4351841
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