Title :
Large Signal RF Characterization of Bipolar Transistors
Author :
Tutt, Marcel ; Johnson, Eric
Author_Institution :
Freescale Semicond. Inc., Tempe
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
Conventional performance figures of merit are reviewed and recent new figures of merit due to the proliferation of digital communications are presented. Basic load pull systems are described and sample results are presented. The role of large signal characterization in model validation is given.
Keywords :
microwave bipolar transistors; microwave power amplifiers; power bipolar transistors; RF characterization; bipolar transistors; digital communications; load pull systems; microwave measurements; microwave power bipolar transistor amplifiers; Bipolar transistors; Digital communication; Impedance; Microwave amplifiers; Power amplifiers; Power system modeling; RF signals; Radio frequency; Radiofrequency amplifiers; Voltage; Bipolar transistors; microwave measurements; microwave power amplifiers; microwave power bipolar transistor amplifiers; microwave power bipolar transistors; modeling; power amplifiers; power bipolar transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351841
