Comparison of polarization effects of excitataion light source on photoluminescence spectrum for InGaAsP/InP quantum well structures

The photoluminescence (PL) spectra have been measured by using InGaAsP/InP quantum well structures. Here we change the polarization direction of the excitation light. The PL spectrum peak shifts for TE or TM mode excitation are observed by changing the incident angle of the excitation light. The PL spectrum peak for TM mode excitation moves toward the longer wavelength, while that for TE mode excitation moves toward the shorter wavelength. We have evaluated the PL peak shift by using the change in the absorption power of the excited light power. The PL peak shift against the absorption power for TM mode excitation is much larger than that for the TE mode excitation. It is estimated that the intra-band relaxation process of excited carriers for the TE mode excitation is different as compared with that for TM mode excitation.