• DocumentCode
    1814479
  • Title

    Refractive index study of n-type InGaAs grown on InP substrates

  • Author

    Gozu, S. ; Mozume, T. ; Ishikawa, H.

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The refractive index of Si doped n-type InGaAs layers grown on InP substrates is studied. It is found that the numerical calculation can explain the carrier density dependence of the refractive index by considering the optical absorption change and the plasma effect.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; indium compounds; refractive index; silicon; solid-state plasma; InGaAs:Si; InP; InP substrates; carrier density; n-type InGaAs; optical absorption; plasma effect; refractive index; Indium gallium arsenide; Indium phosphide; Optical refraction; Optical saturation; Optical signal processing; Optical variables control; Optical wavelength conversion; Refractive index; Switches; Ultrafast optics; InGaAs; doping; optical absorption change; plasma effect; refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4703011
  • Filename
    4703011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1814479