Title :
Refractive index study of n-type InGaAs grown on InP substrates
Author :
Gozu, S. ; Mozume, T. ; Ishikawa, H.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
The refractive index of Si doped n-type InGaAs layers grown on InP substrates is studied. It is found that the numerical calculation can explain the carrier density dependence of the refractive index by considering the optical absorption change and the plasma effect.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; refractive index; silicon; solid-state plasma; InGaAs:Si; InP; InP substrates; carrier density; n-type InGaAs; optical absorption; plasma effect; refractive index; Indium gallium arsenide; Indium phosphide; Optical refraction; Optical saturation; Optical signal processing; Optical variables control; Optical wavelength conversion; Refractive index; Switches; Ultrafast optics; InGaAs; doping; optical absorption change; plasma effect; refractive index;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703011
