Title :
Injection type GaInAsP/InP/Si DFB lasers directly bonded on SOI substrate
Author :
Okumura, Tadashi ; Maruyama, Takeo ; Yonezawa, Hidenori ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
Abstract :
Injection type DFB lasers directly bonded on an SOI substrate were realized for the first time. A threshold current as low as 104 mA was obtained with a stripe width of 25 mum and a cavity length of 1 mm.
Keywords :
III-V semiconductors; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; photoluminescence; semiconductor heterojunctions; semiconductor lasers; silicon; silicon-on-insulator; vapour phase epitaxial growth; wafer bonding; GaInAsP-InP-Si; I-L characteristics; I-V curve; OMVPE; SOI substrate; cavity length; injection type DFB lasers; photoluminescence; size 1 mm; size 25 mum; stripe width; threshold current; Distributed feedback devices; Indium phosphide; Laser feedback; Optical feedback; Optical waveguides; Semiconductor lasers; Silicon on insulator technology; Substrates; Wafer bonding; Waveguide lasers; Distributed Feedback laser; Photonic Integrated Circuit; Silicon On Insulator; Wafer Bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703013
