Title :
A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm / 32.3 dBm Output Power at 56 % / 44 % PAE in Low/High-Band
Author :
Sogl, Bernhard ; Bakalski, Winfried ; Zannoth, Markus ; Asam, Michael ; Kapfelsperger, Boris ; Berkner, Jörg ; Eisener, Bernd ; Österreicher, Wilfried ; Rampf, Erwin ; Scholtz, Arpad L. ; Klepser, Bernd-Ulrich
Author_Institution :
Infineon Technol. AG, Neubiberg
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915MHz and 1710-1910MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a bias-control circuit for power control, band select and mode dependent quiescent currents. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak PAE is 56 % for low-band and 44 % for high-band.
Keywords :
Ge-Si alloys; UHF amplifiers; bipolar integrated circuits; cellular radio; power amplifiers; semiconductor materials; Ge-Si; bias-control circuit; mode dependent quiescent currents; power control; quad-band GSM-EDGE-compliant bipolar power amplifier; GSM; Heterojunction bipolar transistors; High power amplifiers; Inductors; Integrated circuit technology; Linearity; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; EDGE; GSM; Power amplifiers; RF circuits; Silicon bipolar; analog circuits; mobile phone;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351846
