Title :
1200V-Class HVIC technology with a divided high-side well structure for high-functionality and downsizing of circuits
Author :
Jonishi, Akihiro ; Akahane, Masashi ; Yamaji, Masaharu ; Imai, Tetsuro ; Kanno, Hayato ; Tanaka, T. ; Tomita, Wataru ; Mori, Takayoshi ; Sumida, Hitoshi
Author_Institution :
Power Semicond. Dev. Div., Fuji Electr. Co., Ltd., Matsumoto, Japan
Abstract :
A novel high-side well structure for a 1200V-class HVIC on a p-type substrate has been developed. The high-side well structure, consists of divided well regions with different voltage, makes it possible to integrate multiple circuits driven by different supply voltages on the high-side region in the HVIC. With implementing the developed structure, IGBT protection circuits on the high-side can be allocated 17% smaller area, and a 1200V-class HVICs with high functionality and high noise tolerance has been developed.
Keywords :
driver circuits; insulated gate bipolar transistors; power integrated circuits; power supply circuits; HVIC technology; IGBT protection circuits; circuit downsizing; divided high side well structure; multiple circuit integration; p-type substrate; supply voltage; voltage 1200 V; Circuit faults; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Noise; Substrates; Transient analysis;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856066
