Title :
A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures
Author :
Finn, Steven ; Yuan, Jiahui ; Krithivasan, Ram ; Najafizadeh, Laleh ; Cheng, Peng ; Cressler, John D.
Author_Institution :
Georgia Inst. of Technol., Atlanta
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
A 10 Mbps wire-line transceiver compatible with the RS-485 standard is implemented in SiGe BiCMOS technology. This general purpose SiGe bus transceiver represents the first demonstration of a wide temperature range (-180degC to +27degC) enabled, radiation tolerant as built, wire-line transceiver, and is intended for use in emerging space system avionics platforms. Robust functionality within specifications from -180degC to +27degC is demonstrated.
Keywords :
BiCMOS integrated circuits; avionics; cryogenics; germanium compounds; silicon compounds; transceivers; RS-485 standard; SiGe; SiGe BiCMOS transceiver; bit rate 10 Mbit/s; cryogenic temperatures; space system avionics platforms; temperature -180 C to 27 C; wire-line transceiver; BiCMOS integrated circuits; CMOS technology; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Space technology; Temperature; Transceivers; Voltage; Analog circuits; SiGe HBT; cryogenic electronics; device physics; digital circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351849
