Title :
A Drive-by-Microwave isolated gate driver with a high-speed voltage monitoring
Author :
Nagai, Shuichi ; Kawai, Yusuke ; Tabata, Osamu ; Fujiwara, H. ; Yamada, Y. ; Otsuka, N. ; Ueda, Daisuke ; Negoro, Noboru ; Ishida, Makoto
Author_Institution :
Device Solutions Center, Panasonic Corp., Moriguchi, Japan
Abstract :
A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost printed circuit board. The fabricated DBM gate driver demonstrates a 200 Mbps isolated data transmission and a GaN power switching device´s driving with a turn-on skew rate of 4.2kV/us. Furthermore, it successfully detects the isolated 1.0Mbps monitoring signal at the secondary side without any isolated voltage source by means of detecting the 2.4GHz return power changing that results from the impedance miss matching of the varicap diode at a receiver.
Keywords :
III-V semiconductors; driver circuits; electric sensing devices; elemental semiconductors; gallium compounds; impedance matching; isolation technology; printed circuits; silicon; switching circuits; varactors; wide band gap semiconductors; DBM; DBM receiver chip; DBM transmitter; GaN-Si; bit rate 1.0 Mbit/s; bit rate 200 Mbit/s; compact isolated coupler; current detection; drive-by-microwave isolated gate driver; frequency 2.4 GHz; high-speed voltage monitoring; impedance miss matching; low-cost printed circuit board; power switching device; signal monitoring; varicap diode; Couplers; Logic gates; Monitoring; Radio frequency; Receivers; Switches; Transmitters;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856069
