Title :
Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications
Author :
Grens, Curtis M. ; Cressler, John D. ; Joseph, Alvin J.
Author_Institution :
Georgia Inst. of Technol., Atlanta
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
Power performance, linearity, and reliability are investigated for aggressive VC bias (i.e., under strong base-current reversal and pinch-in) on cascode SiGe HBTs, in order to determine the influence of avalanche effects on PA performance and reliability. Moderate gain and linearity degradation are associated with excessive VC bias (pinch-in), and dynamic stress at high VC shows behavior similar to mixed-mode (simultaneous high JE + high VCB) stress. No significant degradation to PA performance was observed during dynamic stress.
Keywords :
Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; power amplifiers; semiconductor materials; Si-Ge; aggressively-biased cascode HBT; avalanche effects; dynamic stress; linearity degradation; mixed-mode stress; power amplifier applications; Breakdown voltage; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Power amplifiers; Radio frequency; Silicon germanium; Stress; USA Councils; Virtual colonoscopy; PA; SiGe HBT BiCMOS technology; avalanche breakdown; bipolar transistors; dynamic stress; impact ionization; mixed-mode reliability; power amplifier; safe-operating-area;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351854
