Title :
Mode locking of optically pumped long wavelength InP-Based semiconductor disk lasers with GaInNAs saturable absorber
Author :
Khadour, A. ; Bouchou, S. ; Aubin, G. ; Tourrenc, J.P. ; Miard, A. ; Harmand, J.C. ; Decobert, J. ; Oudar, J.L.
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis
Abstract :
We have used a two quantum-well GaInNAs semiconductor saturable absorber mirror (SESAM) with a high power InP-based semiconductor disk laser to obtain a 2 GHz mode locked OP-VECSEL laser with a pulse width <20 ps.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; laser mirrors; laser mode locking; optical pumping; optical saturable absorption; quantum well devices; semiconductor lasers; GaInNAs-InP; OP-VECSEL laser; frequency 2 GHz; long wavelength semiconductor disk lasers; mode locking; optical pumping; quantum-well semiconductor saturable absorber mirror; Laser excitation; Laser mode locking; Mirrors; Optical pulses; Optical pumping; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Space vector pulse width modulation; Passive mode-locking; SEmiconductor Saturable Absorber Mirror (SESAM); Vertical-External-Cavity Surface-Emitting Laser (VECSEL); external cavity; semiconductor laser;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703021
