Performance comparison of InP and AlGaN/GaN Schottky diode hydrogen sensors

Author

Akazawa, Masamichi ; Hasegawa, Hideki

Author_Institution

Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Performances of InP-based and AlGaN-based Schottky diode hydrogen sensors with low-leakage currents were compared for understanding of the underlying sensing mechanism and for the purpose of material selection. The result indicated applicability of the interface dipole mechanism for sensing, higher sensitivity of InP sensor at room temperature and superiority of the AlGaN sensor at higher temperatures.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; hydrogen; indium compounds; leakage currents; wide band gap semiconductors; AlGaN-GaN; InP; Schottky diode hydrogen sensors; gas sensor; interface dipole mechanism; low-leakage currents; sensing mechanism; temperature 293 K to 298 K; Aluminum gallium nitride; Gallium nitride; Hydrogen; Indium phosphide; Leakage current; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature sensors; Wireless sensor networks; AlGaN; In; Schottky diod; hydrogen sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703024

Filename

4703024