Title :
Long indium phosphide crystals : A contribution to boost commercial applications
Author :
Jacquier, Christophe ; Kessler, Thierry ; Jacob, Guy
Author_Institution :
InPACT, Moutiers
Abstract :
InP is the material of choice for many applications (telecoms, automotive, medical, industrial sensors, spectroscopy, displays, lighting). All these markets demand constant improvements in the field of cost reduction and profitability at every stage of the manufacturing chain. At the crystal level, it is important to increase the number of wafers per boule. The growth of long 2, 3 and 4 inch crystals together with their properties will be presented and presented in this publication.
Keywords :
III-V semiconductors; cost reduction; crystal growth from melt; indium compounds; semiconductor device manufacture; InP; cost reduction; crystal growth; demand constant improvements; liquid encapsulated Czochralski techniques; long indium phosphide crystals; manufacturing chain; profitability; size 2 inch; size 3 inch; size 4 inch; Automotive engineering; Communication industry; Costs; Crystalline materials; Crystals; Displays; Indium phosphide; Manufacturing industries; Spectroscopy; Telecommunications; Indium Phosphide; Long crystals; cost reduction; homogeneity;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703025
