Long indium phosphide crystals : A contribution to boost commercial applications

Author

Jacquier, Christophe ; Kessler, Thierry ; Jacob, Guy

Author_Institution

InPACT, Moutiers

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

InP is the material of choice for many applications (telecoms, automotive, medical, industrial sensors, spectroscopy, displays, lighting). All these markets demand constant improvements in the field of cost reduction and profitability at every stage of the manufacturing chain. At the crystal level, it is important to increase the number of wafers per boule. The growth of long 2, 3 and 4 inch crystals together with their properties will be presented and presented in this publication.

Keywords

III-V semiconductors; cost reduction; crystal growth from melt; indium compounds; semiconductor device manufacture; InP; cost reduction; crystal growth; demand constant improvements; liquid encapsulated Czochralski techniques; long indium phosphide crystals; manufacturing chain; profitability; size 2 inch; size 3 inch; size 4 inch; Automotive engineering; Communication industry; Costs; Crystalline materials; Crystals; Displays; Indium phosphide; Manufacturing industries; Spectroscopy; Telecommunications; Indium Phosphide; Long crystals; cost reduction; homogeneity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703025

Filename

4703025