DocumentCode
1814861
Title
The evolution of IGBT technology
Author
Langdon, J.
Author_Institution
Toshiba Electron., Tokyo, Japan
fYear
1991
fDate
33359
Firstpage
42401
Lastpage
42407
Abstract
IGBT (insulated gate bipolar transistor) was first introduced in the early 1980s. It appeared to be an ideal power switching device, it had the fast switching speed and high input impedance of the MOSFET, plus the low saturation characteristics of the bipolar device. One drawback of the IGBT structure is the existence of a `parasitic thyristor´ which is prone to latch up. During ten years of production problems of latch up have been solved, plus the switching and saturation performances have been significantly improved
Keywords
insulated gate bipolar transistors; power transistors; ´parasitic thyristor´; IGBT technology; fast switching speed; high input impedance; insulated gate bipolar transistor; latch up prevention; low saturation characteristics; power switching device; saturation performances;
fLanguage
English
Publisher
iet
Conference_Titel
New Developments in Power Semiconductor Devices, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
286020
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