DocumentCode :
1814893
Title :
Power semiconductors-innovation and improvement continue to challenge the designer
Author :
Grant, D.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fYear :
1991
fDate :
33359
Firstpage :
42370
Lastpage :
42375
Abstract :
While power electronics draws on many disciplines, the power device technology remains crucial and designers need to monitor developments in this area. This has never been truer than it is at the present time, with new devices appearing and others evolving rapidly. The author discusses the GTO, power MOSFET, IGBT, MOS controlled thyristor (MCT), SIT, BJT, double-gated devices, trench technology, soft switching, and the feasibility of using SiC
Keywords :
power electronics; power transistors; reviews; semiconductor materials; silicon compounds; thyristors; BJT; GTO; IGBT; MCT; MOS controlled thyristor; SIT; Si; SiC; double-gated devices; power MOSFET; power device technology; power electronics; soft switching; trench technology;
fLanguage :
English
Publisher :
iet
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
286021
Link To Document :
بازگشت