Title :
Structural and electrical properties of Tb2TiO5 charge trapping layer memories
Author :
Pan, Tung-Ming ; Chen, Fa-Hsyang ; Jung, Ji-Shing
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
We proposed a metal-oxide-high-k-oxide-silicon (MOHOS) memory structure using a high-k Tb2TiO5 as a charge trapping layer for nonvolatile memory application. The structural and morphological features of these films were explored by x-ray diffraction, transmission electron microscopic, atomic force microscopy, and x-ray photoelectron spectroscopic. The Tb2TiO5 MOHOS-type memory annealed 800°C exhibited a large memory window of 2.9 V and a low charge loss of ~15 % after 10 years. These results are attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Tb2TiO5 structure with a higher dielectric constant.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; elemental semiconductors; flash memories; high-k dielectric thin films; permittivity; random-access storage; silicon; surface morphology; terbium compounds; transmission electron microscopy; Si; Tb2TiO5-Si; X-ray diffraction; X-ray photoelectron spectroscopy; annealing; atomic force microscopy; charge carrier; charge trapping layer memories; dielectric constant; electrical properties; flash memory; metal-oxide-high-k-oxide-silicon nonvolatile memory structure; structural properties; surface morphology; temperature 800 degC; thin films; time 10 year; transmission electron microscopy; well-crystallized structure; Annealing; Charge carrier processes; Films; Flash memory; High K dielectric materials; Temperature; Temperature measurement; Tb2TiO5; charge trapping layer; metal-oxide-high-k-oxide-silicon (MOHOS);
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
DOI :
10.1109/ICONN.2010.6045160