Structural and electrical properties of Tb2TiO5 charge trapping layer memories

We proposed a metal-oxide-high-k-oxide-silicon (MOHOS) memory structure using a high-k Tb₂TiO₅ as a charge trapping layer for nonvolatile memory application. The structural and morphological features of these films were explored by x-ray diffraction, transmission electron microscopic, atomic force microscopy, and x-ray photoelectron spectroscopic. The Tb₂TiO₅ MOHOS-type memory annealed 800°C exhibited a large memory window of 2.9 V and a low charge loss of ~15 % after 10 years. These results are attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Tb₂TiO₅ structure with a higher dielectric constant.