Title :
A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems
Author :
Comeau, Jonathan P. ; Morton, Matt A. ; Kuo, Wei-Min Lance ; Thrivikraman, Tushar ; Andrews, Joel M. ; Grens, Curtis ; Cressler, John D. ; Papapolymerou, John ; Mitchell, Mark
Author_Institution :
Georgia Inst. of Technol., Atlanta
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
This work presents a 5-bit receiver for X-band phased-array radar applications based on a commercially-available silicon-germanium (SiGe) BiCMOS technology. The receiver achieves a gain of 11 dB, an operational bandwidth from 8.0 to 10.7 GHz, an average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP3) of-13 dBm, while only dissipating 33 mW of power. The receiver also provides 32 distinct phase states from 0 to 360deg, with an rms phase error < 9deg. This level of circuit performance and integration capability demonstrates the benefits of SiGe BiCMOS technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.
Keywords :
BiCMOS integrated circuits; heterojunction bipolar transistors; phased array radar; radar receivers; silicon; HBT; X-band phased-array radar transmit/receive modules; heterojunction bipolar transistors; input-referred third-order intercept point; monolithic BiCMOS receiver; silicon-germanium BiCMOS technology; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Phase shifters; Radar applications; Silicon germanium; Switches; USA Councils;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351862
