A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems

Author

Comeau, Jonathan P. ; Morton, Matt A. ; Kuo, Wei-Min Lance ; Thrivikraman, Tushar ; Andrews, Joel M. ; Grens, Curtis ; Cressler, John D. ; Papapolymerou, John ; Mitchell, Mark

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

172

Lastpage

175

Abstract

This work presents a 5-bit receiver for X-band phased-array radar applications based on a commercially-available silicon-germanium (SiGe) BiCMOS technology. The receiver achieves a gain of 11 dB, an operational bandwidth from 8.0 to 10.7 GHz, an average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP₃) of-13 dBm, while only dissipating 33 mW of power. The receiver also provides 32 distinct phase states from 0 to 360deg, with an rms phase error < 9deg. This level of circuit performance and integration capability demonstrates the benefits of SiGe BiCMOS technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.

Keywords

BiCMOS integrated circuits; heterojunction bipolar transistors; phased array radar; radar receivers; silicon; HBT; X-band phased-array radar transmit/receive modules; heterojunction bipolar transistors; input-referred third-order intercept point; monolithic BiCMOS receiver; silicon-germanium BiCMOS technology; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Phase shifters; Radar applications; Silicon germanium; Switches; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351862

Filename

4351862