Title :
InP nanowires grown on Silicon and SrTiO3 by VLS assisted MBE
Author :
Naji, K. ; Dumont, H. ; Saint-Girons, G. ; Robach, Y. ; Rojo-Romeo, P. ; Bru-Chevallier, C. ; Gendry, M. ; Patriarche, G.
Author_Institution :
Inst. des Nanotechnol. de Lyon (INL), CNRS, Lyon
Abstract :
In this report, we show experimental results on the growth and characterization of InP nanowires (NWs) grown on silicon and SrTiO3 substrates by solid source molecular beam epitaxy (SSMBE) using Au-assisted catalytic growth. Our objective is to study the effect of a thin crystalline oxide template on the nucleation and growth orientation of the InP NWs. Various growth parameters such as growth temperature and phosphorous pressure were studied to control the NWs growth. Structural and optical properties of the InP NWs are also studied by photoluminescence and transmission electron microscopy.
Keywords :
III-V semiconductors; catalysis; indium compounds; molecular beam epitaxial growth; nanotechnology; nanowires; nucleation; photoluminescence; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; InP; Si; SrTiO3; catalytic growth; growth orientation; nanowires; nucleation; photoluminescence; solid source molecular beam epitaxy; transmission electron microscopy; Crystallization; Indium phosphide; Molecular beam epitaxial growth; Nanowires; Optical microscopy; Pressure control; Silicon; Solids; Substrates; Temperature control; InP/Si nanowires; VLS; oxide template; solid source MBE;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703029
