InP nanowires grown on Silicon and SrTiO3 by VLS assisted MBE

Author

Naji, K. ; Dumont, H. ; Saint-Girons, G. ; Robach, Y. ; Rojo-Romeo, P. ; Bru-Chevallier, C. ; Gendry, M. ; Patriarche, G.

Author_Institution

Inst. des Nanotechnol. de Lyon (INL), CNRS, Lyon

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

In this report, we show experimental results on the growth and characterization of InP nanowires (NWs) grown on silicon and SrTiO₃ substrates by solid source molecular beam epitaxy (SSMBE) using Au-assisted catalytic growth. Our objective is to study the effect of a thin crystalline oxide template on the nucleation and growth orientation of the InP NWs. Various growth parameters such as growth temperature and phosphorous pressure were studied to control the NWs growth. Structural and optical properties of the InP NWs are also studied by photoluminescence and transmission electron microscopy.

Keywords

III-V semiconductors; catalysis; indium compounds; molecular beam epitaxial growth; nanotechnology; nanowires; nucleation; photoluminescence; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; InP; Si; SrTiO₃; catalytic growth; growth orientation; nanowires; nucleation; photoluminescence; solid source molecular beam epitaxy; transmission electron microscopy; Crystallization; Indium phosphide; Molecular beam epitaxial growth; Nanowires; Optical microscopy; Pressure control; Silicon; Solids; Substrates; Temperature control; InP/Si nanowires; VLS; oxide template; solid source MBE;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703029

Filename

4703029